Realization of Analog Circuits using Double Gate MOSFET at 32nm CMOS Technology
نویسندگان
چکیده
In this paper, design of analog circuit using double gate (DG) MOSFET where the front gate output is changed by control voltage on the back gate. The DG devices can be used to improve the performance and reduce the power dissipation when the front gate and back gate both are independently controlled. The analysis of the analog circuits such as CMOS amplifier pair, Schmitt trigger circuit and operational trans-conductance amplifier. Transient response and output DC response of analog tunable circuits are going to be analyzed. These circuit blocks are used for low-noise, high performance integrated circuits for analog and mixed-signal applications. The design and simulation results are predicted by Microwind tool in 32nm
منابع مشابه
Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter
This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...
متن کاملTunable Analog and Reconfigurable Digital Circuits with Nanoscale DG - MOSFETs 9
1.1 CMOS downscaling to DG-MOSFETs As device scaling aggressively continues down to sub-32nm scale, MOSFETs built on Silicon on Insulator (SOI) substrates with ultra-thin channels and precisely engineered source/drain contacts are required to replace conventional bulk devices (Celler & Cristoloveanu, 2009). Such SOI MOSFETs are built on top of an insulation (SiO2) layer, reducing the coupling c...
متن کاملTunable Analog and Reconfigurable Digital Circuits with Nanoscale DG-MOSFETs
1.1 CMOS downscaling to DG-MOSFETs As device scaling aggressively continues down to sub-32nm scale, MOSFETs built on Silicon on Insulator (SOI) substrates with ultra-thin channels and precisely engineered source/drain contacts are required to replace conventional bulk devices (Celler & Cristoloveanu, 2009). Such SOI MOSFETs are built on top of an insulation (SiO2) layer, reducing the coupling c...
متن کاملEffects of scaling on the characteristics of CMOS analog circuits
Continued scaling of CMOS technology affects both, the parameters and the characteristics of MOSFET and the integrated circuit built on them and introduces some new problems in analog design. The reduction of the gate length and the gate oxide thickness led to improvements in terms of chip area, speed and power consumption. At the same time, nonlinear output conductance, reduced voltage gain an...
متن کاملDual Metal Gate and Conventional MOSFET at Sub nm for Analog Application
The use of nanometer CMOS technologies (below 90nm) however brings along significant challenges for circuit design (both analog and digital). By reducing the dimensions of transistors many physical phenomenon like gate leakage, drain induced barrier lowering and many more effects comes into picture. Reducing the feature size in the technology of device with the addition of ever more interconnec...
متن کامل